PART |
Description |
Maker |
HM5216165 HM5216165TT-10H HM5216165TT-12 |
16M LVTTL INTERFACE SDRAM (512-kword x 16-bit x 2-bank)
|
Elpida Memory
|
HYS64D64020HDL-5-B HYS64D64020HDL-6-B |
DDR SDRAM Modules - 512 MB (64Mx64) PC3200 2-bank DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank
|
Infineon
|
HB52RF649E1U-75B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133 SDRAM
|
Elpida Memory
|
HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02 512MB PC133 (3-3-3) 1-bank POT 100 OHM 3/8 SQ CERM SL ST 2GB PC133 (3-3-3) 2-bank available 4Q02 256MB PC133 (3-3-3) 1-bank End-of-Life 512MB PC100 (2-2-2) 1-bank End-of-Life 1GB PC133 (3-3-3) 2-bank End-of-Life 2GB PC133 (2-2-2) 2-bank available 4Q02 PC133 Registered SDRAM-Modules PC133的SDRAM的注册模 1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的(3-3-3银行提供待定 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Infineon Technologies AG Infineon Technologies A...
|
HM5259405B-A6 HM5259165B-75 HM5259405B-75 HM525980 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
HM5216805 HM5216805LTT-10H HM5216805TT-10H HM52168 |
16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword ? 8-bit ? 2-bank/2-Mword ? 4-bit ? 2-bank
|
Hitachi Semiconductor
|
S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 CONNECTOR ACCESSORY 连接器附 CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 JT 16C 16#16 PIN RECP CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC Spansion, Inc. Spansion Inc.
|
SRI51211 SRI512 SRI512-SBN18/1GE |
512-bit ISO14443-B contactless memory with 2 binary counters, 5 OTP blocks and anti-collision 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
|
ST Microelectronics STMicroelectronics
|
HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank 512MB (64Mx72) PC1600 1-bank 512MB (64Mx72) PC2100 1-bank 1GB (128Mx72) PC1600 2-bank 1GB (128Mx72) PC2100 2-bank GB的(128Mx72)PC2100 2银行 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48 Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).2伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
|